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Semiconductor characterization techniques : ウィキペディア英語版 | Semiconductor characterization techniques The purpose of this article is to summarize the methods used to experimentally characterize a semiconductor material or device (PN junction, Schottky diode, etc.). Some examples of semiconductor quantities that could be characterized include depletion width, carrier concentration, optical generation and recombination rate, carrier lifetimes, defect concentration, trap states, etc. These quantities fall into three categories when it comes to characterization methods: 1) Electrical Characterization 2) Optical Characterization 3) Physical/Chemical Characterization == Electrical Characterization Techniques == Electrical Characterization can be used to determine resistivity, carrier concentration, mobility, contact resistance, barrier height, depletion width, oxide charge, interface states, carrier lifetimes, and deep level impurities. Two-Point Probe, Four-Point Probe, Differential Hall Effect, Capacitance-Voltage Profiling, DLTS, Electron beam-induced current, and DLCP.
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